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2007 Volume 16 Issue 7
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Liu Hong-Xia, Hao Yue. 2007: Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs), Chinese Physics B, 16(7): 2111-2115.
Citation: Liu Hong-Xia, Hao Yue. 2007: Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs), Chinese Physics B, 16(7): 2111-2115.
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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs)

  • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

  • Available Online: 30/07/2007
  • Fund Project: the National Natural Science Foundation of China(Grant 60206006)%the Program for New Century Excellent Talents of Ministry of Education of China(Grant 681231366)%the National Defense Pre-Research Foundation of China(Grant 51408010305DZ0168)%the Key Project of Chinese Ministry of Education(Grant 104172)
  • Hot carrier injection (HCI) at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors(PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs)

  • Available Online: 30/07/2007

Abstract: Hot carrier injection (HCI) at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors(PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.

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